ap10C150h advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 100v good thermal performance r ds(on) 150m fast switching performance i d 8a rohs compliant & halogen-free p-ch bv dss -100v r ds(on) 160m description i d -8a absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol parameter rating units n-channel p-channel v ds drain-source voltage 100 -100 v v gs gate-source voltage + 20 + 20 v i d @t c =25 8 -8 a i d @t c =100 5 -5 a i d @t a =25 3.2 -3.2 a i d @t a =70 2.5 -2.5 a i dm pulsed drain current 1 20 -20 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 3 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-c maximum thermal resistance, junction-case 6 /w rthj-a maximum thermal resistance, junction-ambient 3 40 /w drain current, v gs @ 10v halogen-free product drain current, v gs @ 10v drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 3.13 201707201 1 parameter thermal data 20.8 g2 d2 s2 g1 d1 s1 s1 to-252-4l g1 s2 g2 d1/d2 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. .
symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v v gs =10v, i d =2a - - 150 m v gs =5v, i d =1a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 10 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =2a - 11 17.6 nc q gs gate-source charge v ds =50v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =50v - 7 - ns t r rise time i d =1a - 4 - ns t d(off) turn-off delay time r g =3.3 -16- ns t f fall time v gs =10v - 7 - ns c iss input capacitance v gs =0v - 600 960 pf c oss output capacitance v ds =50v - 35 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf r g gate resistance f=1.0mhz - 1.8 3.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.4a, v gs =0v - - 1.3 v t rr reverse recovery time i s =2a, v gs =0v - 19 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc 2 ap10C150h n-ch electrical characteristics@ t j =25 o c(unless otherwise specified) r ds(on) static drain-source on-resistance 2 .
ap10C150h symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -100 - - v v gs =-10v, i d =-2a - - 160 m v gs =-5v, i d =-1a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-2a - 7.5 - s i dss drain-source leakage current v ds =-80v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-2a - 32 51.2 nc q gs gate-source charge v ds =-50v - 5.5 - nc q gd gate-drain ("miller") charge v gs =-10v - 5 - nc t d(on) turn-on delay time v ds =-50v - 12 - ns t r rise time i d =-1a - 4 - ns t d(off) turn-off delay time r g =3.3 -46- ns t f fall time v gs =-10v - 17 - ns c iss input capacitance v gs =0v - 1900 3040 pf c oss output capacitance v ds =-50v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 6 12 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.4a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-2a, v gs =0v - 25 - ns q rr reverse recovery charge di/dt=-100a/s - 33 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 3.n-ch , p-ch are same , mounted on 1 in 2 2oz fr4 board t Q 10s. p-ch electrical characteristics@t j =25 o c(unless otherwise specified) r ds(on) static drain-source on-resistance 2 .
ap10C150h n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 0 4 8 12 16 20 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = 250ua 0 2 4 6 8 10 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 98 102 106 110 114 2345678910 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =1a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =2a v g =10v .
ap10C150h n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. total power dissipation fig 12. transfer characteristics 5 0 2 4 6 8 10 12 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =50v 0 200 400 600 800 1000 1 21416181101121 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 4 8 12 16 20 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o ct j =25 o c v ds =10v 0 1 2 3 4 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) .
ap10C150h p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 0 4 8 12 16 20 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 110 114 118 122 126 130 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d = -1 a t a =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = - 250ua 0 2 4 6 8 10 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2a v g = -10v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c .
ap10C150h p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. total power dissipation fig 12. transfer characteristics 7 0 2 4 6 8 10 12 0 10203040 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-2a v ds = -50 v 0 800 1600 2400 3200 1 21 41 61 81 101 121 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 1 2 3 4 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 4 8 12 16 20 012345 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o ct j =25 o c v ds = -10v .
ap10C150h marking information 8 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 10C150 ywwsss .
|
